www.德州仪器.com
electricalcharacteristics:v
S
=+3.3v
BUF602
SBOS339–OCTOBER2005
黑体字
limitsaretestedat
+25
°
c.
AtR
L
=100
Ω
,unlessotherwisenoted.
buf602id,idbv
typmin/maxovertemperature
0
°
Cto–40
°
ctomin/
PARAMETERCONDITIONS+25
°
C+25
°
C
(2)
70
°
C
(3)
+85
°
C
(3)
UNITSMAXTESTLEVEL
(1)
ACPERFORMANCE
BandwidthV
O
=500mV
PP
600320320310MHzminB
FullPowerBandwidthV
O
=1V
PP
520MHztypC
bandwidthfor0.1dbflatnessv
O
=500mV
PP
110MHztypC
SlewRateV
O
=1.4vstep800650600600v/
µ
sminB
RiseTimeandFallTimeV
O
=0.2vstep580110011001150psmaxb
settlingtimeto0.05%v
O
=1vstep6.5nstypc
HarmonicDistortionV
O
=1V
PP
,5mhz
2nd-harmonicr
L
=100
Ω
–59–49–49–48dBcmaxB
R
L
=500
Ω
–76–61–57–53dBcmaxB
3rd-harmonicr
L
=100
Ω
–70–51–48–44dBcmaxB
R
L
=500
Ω
–63–51–48–44dBcmaxB
inputvoltagenoisef>100khz4.95.25.76.1nv/
√
HzmaxB
inputcurrentnoisef>100khz2.22.72.82.9pa/
√
HzmaxB
BUFFERDCPERFORMANCE
(4)
MaximumGainR
L
=500
Ω
0.99
1
11v/vmaxa
MinimumGainR
L
=500
Ω
0.99
0.98
0.980.98v/vmina
InputOffsetVoltage
±
16
±
30
±
36
±
38mVmaxA
AverageInputOffsetVoltageDrift
±
125
±
125
µ
v/
°
CmaxB
InputBiasCurrent
±
3
±
7
±
8
±
8.5
µ
AmaxA
AverageInputBiasCurrentDrift
±
20
±
20na/
°
CmaxB
BUFFERINPUT
inputimpedance1.0||2.1m
Ω
||pFtypC
BUFFEROUTPUT
MostPositiveOutputVoltageR
L
=100
Ω
+2.1+2.0+2.0+2.0vminb
R
L
=500
Ω
+2.3
+2.2
+2.2+2.2vmina
LeastPositiveOutputVoltageR
L
=100
Ω
+1.2+1.3+1.3+1.3vmaxb
R
L
=500
Ω
+1.0
+1.1
+1.1+1.1vmaxa
outputcurrent(持续的)v
O
=0
±
60
±
50
±
49
±
48mAminA
PeakOutputCurrent
±
100mAtypC
关闭-loopoutputimpedancef
≤
10mhz1.4
Ω
typC
mid-pointreferenceoutput
maximummidsupplyreferencevoltage1.65
1.72
1.721.72vmaxa
minimummidsupplyreferencevoltage1.65
1.58
1.581.58vmina
midsupplyoutputcurrent,sourcing500
µ
AtypC
midsupplyoutputcurrent,sinking60
µ
AtypC
MidSupplyOutputImpedance200
Ω
typC
POWERSUPPLY
specifiedoperatingvoltage+3.3vtypc
MaximumOperatingVoltage
+12.6
+12.6+12.6vmaxa
MinimumOperatingVoltage
+2.8
+2.8+2.8vminb
MaximumQuiescentCurrentV
S
=+3.3v5.0
5.5
6.06.3mamaxa
MinimumQuiescentCurrentV
S
=+3.3v5.0
4.5
4.23.8mamina
电源-supplyrejectionratio(+psrr)50
44
4241dBminA
(1)testlevels:(一个)100%testedat25
°
c.overtemperaturelimitssetbycharacterizationandsimulation.(b)limitssetbycharacterization
andsimulation.©)typicalvalueonlyforinformation.
(2)junctiontemperature=ambientfor25
°
cspecifications.
(3)junctiontemperature=ambientatlowtemperaturelimit;junctiontemperature=ambient+2
°
Cathightemperaturelimitforover
temperaturespecifications.
(4)currentisconsideredpositiveoutofnode.
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