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electricalcharacteristics:v
S
=
±
5V
BUF602
SBOS339–OCTOBER2005
黑体字
limitsaretestedat
+25
°
c.
AtR
L
=100
Ω
,unlessotherwisenoted.
buf602id,idbv
typmin/maxovertemperature
0
°
Cto–40
°
ctomin/
PARAMETERCONDITIONS+25
°
C+25
°
C
(2)
70
°
C
(3)
+85
°
C
(3)
UNITSMAXTESTLEVEL
(1)
ACPERFORMANCE
(seefigure30)
BandwidthV
O
=500mV
PP
1000560550540MHzminB
V
O
=1V
PP
920MHztypC
FullPowerBandwidthV
O
=5V
PP
880MHztypC
bandwidthfor0.1dbflatnessv
O
=500mV
PP
240MHztypC
SlewRateV
O
=5vstep8000700060005000v/
µ
sminB
RiseTimeandFallTimeV
O
=0.2vstep350625640650psmaxb
settlingtimeto0.05%v
O
=1VStep6nstypC
HarmonicDistortionV
O
=2V
PP
,5mhz
2nd-harmonicr
L
=100
Ω
–57–44–44–42dBcmaxB
R
L
=500
Ω
–76–63–62–60dBcmaxB
3rd-harmonicr
L
=100
Ω
–68–63–63–63dBcmaxB
R
L
=500
Ω
–98–85–84–82dBcmaxB
inputvoltagenoisef>100khz4.85.15.66.0nv/
√
HzmaxB
inputcurrentnoisef>100khz2.12.62.72.8pa/
√
HzmaxB
differentialgainntsc,r
L
=150
Ω
to0v0.15%typc
differentialphasentsc,r
L
=150
Ω
to0v0.04
°
typC
BUFFERDCPERFORMANCE
(4)
MaximumGainR
L
=500
Ω
0.99
1
11v/vmaxa
MinimumGainR
L
=500
Ω
0.99
0.98
0.980.98v/vmina
InputOffsetVoltage
±
16
±
30
±
36
±
38mVmaxA
AverageInputOffsetVoltageDrift
±
125
±
125
µ
v/
°
CmaxB
InputBiasCurrent
±
3
±
7
±
8
±
8.5
µ
AmaxA
AverageInputBiasCurrentDrift
±
20
±
20na/
°
CmaxB
BUFFERINPUT
inputimpedance1.0||2.1m
Ω
||pFtypC
BUFFEROUTPUT
OutputVoltageSwingR
L
=100
Ω±
3.8
±
3.7
±
3.7
±
3.7vminb
R
L
=500
Ω±
4.0
±
3.8
±
3.8
±
3.8vmina
outputcurrent(持续的)v
O
=0V
±
60
±
50
±
49
±
48mAminA
PeakOutputCurrentV
O
=0V
±
350mAtypC
关闭-loopoutputimpedancef
≤
10mhz1.4
Ω
typC
POWERSUPPLY
SpecifiedOperatingVoltage
±
5VtypC
MaximumOperatingVoltage
±
6.3
±
6.3
±
6.3vmaxa
MinimumOperatingVoltage
±
1.4
±
1.4
±
1.4vminb
MaximumQuiescentCurrentV
S
=
±
5v5.8
6.3
6.97.2mamaxa
MinimumQuiescentCurrentV
S
=
±
5v5.8
5.3
4.94.3mamina
电源-supplyrejectionratio(+psrr)54
48
4645dBminA
(1)testlevels:(一个)100%testedat25
°
c.overtemperaturelimitssetbycharacterizationandsimulation.(b)limitssetbycharacterization
andsimulation.©)typicalvalueonlyforinformation.
(2)junctiontemperature=ambientfor25
°
cspecifications.
(3)junctiontemperature=ambientatlowtemperaturelimit;junctiontemperature=ambient+8
°
Cathightemperaturelimitforover
temperaturespecifications.
(4)currentisconsideredpositiveoutofnode.
3

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www.德州仪器.com electricalcharacteristics:v S = ± 5V BUF602 SBOS339–OCTOBER2005 黑体字 limitsaretestedat +25 ° c. AtR L =100 Ω ,unlessotherwisenoted. buf602id,idbv typmin/maxovertemperature 0 ° Cto–40 ° ctomin/ PARAMETERCONDITIONS+25 ° C+25 ° C (2) 70 ° C (3) +85 ° C (3) UNITSMAXTESTLEVEL (1) ACPERFORMANCE (seefigure30) BandwidthV O =500mV PP 1000560550540MHzminB V O =1V PP 920MHztypC FullPowerBandwidthV O =5V PP 880MHztypC bandwidthfor0.1dbflatnessv O =500mV PP 240MHztypC SlewRateV O =5vstep8000700060005000v/ µ sminB RiseTimeandFallTimeV O =0.2vstep350625640650psmaxb settlingtimeto0.05%v O =1VStep6nstypC HarmonicDistortionV O =2V PP ,5mhz 2nd-harmonicr L =100 Ω –57–44–44–42dBcmaxB R L =500 Ω –76–63–62–60dBcmaxB 3rd-harmonicr L =100 Ω –68–63–63–63dBcmaxB R L =500 Ω –98–85–84–82dBcmaxB inputvoltagenoisef>100khz4.85.15.66.0nv/ √ HzmaxB inputcurrentnoisef>100khz2.12.62.72.8pa/ √ HzmaxB differentialgainntsc,r L =150 Ω to0v0.15%typc differentialphasentsc,r L =150 Ω to0v0.04 ° typC BUFFERDCPERFORMANCE (4) MaximumGainR L =500 Ω 0.99 1 11v/vmaxa MinimumGainR L =500 Ω 0.99 0.98 0.980.98v/vmina InputOffsetVoltage ± 16 ± 30 ± 36 ± 38mVmaxA AverageInputOffsetVoltageDrift ± 125 ± 125 µ v/ ° CmaxB InputBiasCurrent ± 3 ± 7 ± 8 ± 8.5 µ AmaxA AverageInputBiasCurrentDrift ± 20 ± 20na/ ° CmaxB BUFFERINPUT inputimpedance1.0\|\|2.1m Ω \|\|pFtypC BUFFEROUTPUT OutputVoltageSwingR L =100 Ω± 3.8 ± 3.7 ± 3.7 ± 3.7vminb R L =500 Ω± 4.0 ± 3.8 ± 3.8 ± 3.8vmina outputcurrent(持续的)v O =0V ± 60 ± 50 ± 49 ± 48mAminA PeakOutputCurrentV O =0V ± 350mAtypC 关闭-loopoutputimpedancef ≤ 10mhz1.4 Ω typC POWERSUPPLY SpecifiedOperatingVoltage ± 5VtypC MaximumOperatingVoltage ± 6.3 ± 6.3 ± 6.3vmaxa MinimumOperatingVoltage ± 1.4 ± 1.4 ± 1.4vminb MaximumQuiescentCurrentV S = ± 5v5.8 6.3 6.97.2mamaxa MinimumQuiescentCurrentV S = ± 5v5.8 5.3 4.94.3mamina 电源-supplyrejectionratio(+psrr)54 48 4645dBminA (1)testlevels:(一个)100%testedat25 ° c.overtemperaturelimitssetbycharacterizationandsimulation.(b)limitssetbycharacterization andsimulation.©)typicalvalueonlyforinformation. (2)junctiontemperature=ambientfor25 ° cspecifications. (3)junctiontemperature=ambientatlowtemperaturelimit;junctiontemperature=ambient+8 ° Cathightemperaturelimitforover temperaturespecifications. (4)currentisconsideredpositiveoutofnode. 3

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