©2002 仙童 半导体 公司 rfd14n05, rfd14n05sm, rfp14n05 rev. b1
pspice 电的 模型
.子电路定义 rfp14n05 2 1 3;rev 9/12/94
ca 12 8 8.84e-10
cb 15 14 9.34e-10
cin 6 8 5.2e-10
dbody 7 5 dbdmod
dbreak 5 11 dbkmod
dplcap 10 5 dplcapmod
ebreak 11 7 17 18 62.87
eds 14 8 5 8 1
egs 13 8 6 8 1
esg 6 10 6 8 1
evto 20 6 18 8 1
它 8 17 1
ldrain 2 5 1e-9
lgate 1 9 4.34e-9
lsource 3 7 3.79e-9
mos1 16 6 8 8 mosmod m = 0.99
mos2 16 21 8 8 mosmod m = 0.01
rbreak 17 18 rbkmod 1
rdrain 50 16 rdsmod 2.2e-3
rgate 9 20 5.64
rin 6 8 1e9
rscl1 5 51 rsclmod 1e-6
rscl2 5 50 1e3
rsource 8 7 rdsmod 42.3e-3
rvto 18 19 rvtomod 1
s1a 6 12 13 8 s1amod
s1b 13 12 13 8 s1bmod
s2a 6 15 14 13 s2amod
s2b 13 15 14 13 s2bmod
vbat 8 19 直流 1
vto 21 6 0.82
escl 51 50 值 = {(v(5,51)/abs(v(5,51)))*(pwr(v(5,51)*1e6/50,6))}
.模型 dbdmod d (是 = 1.5e-13rs = 10.9e-3trs1 = 2.3e-3trs2 = -1.75e-5cjo = 6.84e-10tt = 4.2e-8)
.模型 dbkmod d (rs = 4.15e-1trs1 = 3.73e-3trs2 = -3.21e-5)
.模型 dplcapmod d (cjo = 26.2e-11是 = 1e-30n = 10)
.模型 mosmod nmos (vto = 3.91kp = 12.68是 = 1e-30n = 10tox =1l = 1uw = 1u)
.模型 rbkmod res (tc1 = 7.73e-4tc2 = 2.12e-6)
.模型 rdsmod res (tc1 = 5.0e-3tc2 = 2.53e-5)
.模型 rsclmod res (tc1 = 2.05e-3 tc2 = 1.35e-5)
.模型 rvtomod res (tc1 = -4.44e-3tc2 = -6.45e-6)
.模型 s1amod vswitch (ron = 1e-5roff = 0.1von = -5.29voff= -3.29)
.模型 s1bmod vswitch (ron = 1e-5roff = 0.1von = -3.29voff= -5.29)
.模型 s2amod vswitch (ron = 1e-5roff = 0.1von = -2.25voff= 2.75)
.模型 s2bmod vswitch (ron = 1e-5roff = 0.1von = 2.75voff= -2.25)
.ends
便条: 为 更远 discussion 的 这 pspice 模型, 咨询
一个 新 pspice sub-电路 为 这 电源 场效应晶体管 featuring global
温度 选项
; 写 用 william j. hepp 和 c. frank wheatley.
EVTO
+
13
CA
CB
EGS EDS
RIN
CIN
MOS1
MOS2
DBREAK
EBREAK
DBODY
LDRAIN
流
RSOURCE
LSOURCE
源
RBREAK
RVTO
VBAT
它
VTO
DPLCAP
6
10
5
16
21
8
14
7
3
17 18
19
2
+
+
+
RDRAIN
ESCL
RSCL1
RSCL2
51
50
+
S1A S2A
S2BS1B
12
15
13
8
14
13
6
8
+
-
5
8
-
-
18
8
R门
门
L门
209
1
ESG
+
-
6
8
11
+
-
17
18
5
51
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